The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Dec. 20, 2002
Victor C. Y. Chang, Tucheng, TW;
Chung-shi Chiang, Changhua, TW;
Chien-wen Chen, Hsin Chu, TW;
Harry Chuang, Austin, TX (US);
Hsin-yi Lee, Hsin Chu, TW;
Yu-tai Chia, San Jose, CA (US);
Victor C. Y. Chang, Tucheng, TW;
Chung-Shi Chiang, Changhua, TW;
Chien-Wen Chen, Hsin Chu, TW;
Harry Chuang, Austin, TX (US);
Hsin-Yi Lee, Hsin Chu, TW;
Yu-Tai Chia, San Jose, CA (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, JP;
Abstract
Each of a method for determining a parasitic capacitance and an apparatus for determining the parasitic capacitance provides for an experimental correlation within a parasitic capacitance model of a series of conductor layer nominal dimensions and spacings with a process related deviation to provide a series of conductor layer actual dimensions and spacings. The method and the apparatus further provide for determining the parasitic capacitance while employing the conductor layer actual dimensions and spacings. The parasitic capacitance is thus determined with enhanced accuracy.