The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2006

Filed:

Jun. 15, 2004
Applicants:

Frank Y. H. Fan, Pleasanton, CA (US);

David L. Adler, San Jose, CA (US);

Kirk J. Bertsche, San Jose, CA (US);

Luca Grella, Gilroy, CA (US);

Inventors:

Frank Y. H. Fan, Pleasanton, CA (US);

David L. Adler, San Jose, CA (US);

Kirk J. Bertsche, San Jose, CA (US);

Luca Grella, Gilroy, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/256 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment disclosed relates to a method for robustly detecting a defective high aspect ratio (HAR) feature. A surface area of a semiconductor specimen with HAR features thereon is charged up, and a primary beam is impinged onto the surface area. Scattered electrons that are generated due to the impingement of the primary beam are extracted from the surface area. An energy filter is applied to remove the scattered electrons with lower energies, and the filtered electrons are detected. Image data is generated from the detected electrons, and an intensity threshold is applied to the image data.


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