The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Sep. 04, 2003
LI Te Hsu, Tainan, TW;
Chia Lun Chen, Tainan, TW;
Chiang Jen Peng, Jhubei, TW;
Pin Chia Su, Tainan, TW;
Li Te Hsu, Tainan, TW;
Chia Lun Chen, Tainan, TW;
Chiang Jen Peng, Jhubei, TW;
Pin Chia Su, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for reducing the loss of silicon in a plasma assisted photoresist etching process including providing a silicon substrate including a polysilicon gate structure; masking a portion of the silicon substrate with photoresist to carry out an ion implantation process for forming source and drain regions; carrying out an ion implantation process; and, removing the photoresist according to at least one plasma assisted process wherein the at least one plasma assisted process comprises fluorine containing, oxygen, and hydrogen containing plasma source gases.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile