The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Mar. 20, 2002
Ming-fang Wang, Taichung, TW;
Chien-hao Chen, Ilan, TW;
Liang-gi Yao, Hsinchu, TW;
Shih-chang Chen, Taoyuan, TW;
Ming-Fang Wang, Taichung, TW;
Chien-Hao Chen, Ilan, TW;
Liang-Gi Yao, Hsinchu, TW;
Shih-Chang Chen, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method of making a semiconductor device having a silicon dioxide based gate with improved dielectric properties including providing a silicon based substrate having active areas defined therein. Thermally growing a silicon dioxide based gate from the silicon based substrate. Nitriding the silicon dioxide based gate to provide a nitrided silicon dioxide based gate and to increase the dielectric constant of the silicon dioxide based gate without substantially increasing thickness of the silicon dioxide based gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile