The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Sep. 22, 2003
Ta-chung Wu, Hsinchu, TW;
Yi-chuan Yang, Hsinchu, TW;
Shih-chi Lai, Hsinchu, TW;
Yew-jung Chang, Hsinchu, TW;
Ta-Chung Wu, Hsinchu, TW;
Yi-Chuan Yang, Hsinchu, TW;
Shih-Chi Lai, Hsinchu, TW;
Yew-Jung Chang, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
Embodiments of the invention are directed to a method of forming a bottom oxide in a trench structure. In one embodiment, the method includes steps of providing a semiconductor substrate and forming a trench structure in the semiconductor substrate; performing an PECVD process with TEOS as a source to deposit an oxide layer on the bottom and sidewall of the trench structure and the semiconductor substrate; and removing the oxide layer on the sidewall of the trench structure substantially completely and the oxide layer on the bottom of the trench structure partially to define the remained oxide layer as the bottom oxide layer.