The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Oct. 28, 2003
Shaun B. Crawford, Jericho, VT (US);
Timothy J. Dalton, Ridgefield, CT (US);
Thomas B. Faure, Milton, VT (US);
Cuc K. Huynh, Jericho, VT (US);
Michelle L. Steen, Danbury, CT (US);
Thomas M. Wagner, Fairfax, VT (US);
Shaun B. Crawford, Jericho, VT (US);
Timothy J. Dalton, Ridgefield, CT (US);
Thomas B. Faure, Milton, VT (US);
Cuc K. Huynh, Jericho, VT (US);
Michelle L. Steen, Danbury, CT (US);
Thomas M. Wagner, Fairfax, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.