The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Jan. 27, 2004
Baw-ching Perng, Hsin-Chu, TW;
Yuan-hung Chiu, Taipei, TW;
Mei-hui Sung, Tao-Yuan, TW;
Peng-fu Hsu, Hsin-Chu, TW;
Baw-Ching Perng, Hsin-Chu, TW;
Yuan-Hung Chiu, Taipei, TW;
Mei-Hui Sung, Tao-Yuan, TW;
Peng-Fu Hsu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF, CHF, CHF, CHF, CF, CF, CF, BCl, Br, HF, HCl, HBr, HI, and NFand leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.