The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Aug. 30, 2004
Geun-young Yeom, Seoul, KR;
Myung Cheol Yoo, Pleasanton, CA (US);
Wolfram Urbanek, San Jose, CA (US);
Youn-joon Sung, Seoul, KR;
Chang-hyun Jeong, Pusan, KR;
Kyong-nam Kim, Daejeon, KR;
Dong-woo Kim, Chungbuk, KR;
Geun-young Yeom, Seoul, KR;
Myung cheol Yoo, Pleasanton, CA (US);
Wolfram Urbanek, San Jose, CA (US);
Youn-joon Sung, Seoul, KR;
Chang-hyun Jeong, Pusan, KR;
Kyong-nam Kim, Daejeon, KR;
Dong-woo Kim, Chungbuk, KR;
LG Electronics Inc., Seoul, KR;
Abstract
Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCland/or BCl/Clgas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCland/or BCl/Clgas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.