Dong-woo Kim

Title: Innovations of Dong-woo Kim in Substrate Etching Technologies

Introduction

Dong-woo Kim is a notable inventor based in Chungbuk, South Korea. He has made significant contributions to the field of substrate etching technologies, particularly through his innovative methods that enhance the efficiency and precision of semiconductor manufacturing.

Latest Patents

Dong-woo Kim holds two patents, with his latest focusing on a method of etching substrates using inductively coupled plasma reactive ion etching (ICP RIE). This method involves forming a hard photo-resist pattern or metal mask pattern on a sapphire substrate or semiconductor epitaxial layer, which defines scribe lines beneficially created by lithographic techniques. The substrate is then etched along these scribe lines to form etched channels, utilizing an etching gas comprised of BCl and/or BCl/Cl gas, with the optional addition of Ar. This process produces stress lines through the substrate along the etched channels, allowing for precise dicing along these lines. Additionally, the thinning process involves subjecting the substrate surface to ICP RIE using similar etching gases, which is particularly effective for hard substrates like sapphire.

Career Highlights

Throughout his career, Dong-woo Kim has worked with prominent companies such as Oriol Inc. and LG Electronics Inc. His experience in these organizations has allowed him to refine his skills and contribute to advancements in substrate etching technologies.

Collaborations

Dong-woo Kim has collaborated with notable colleagues, including Geun-Young Yeom and Myung Cheol Yoo. These partnerships have fostered innovation and development in their respective fields.

Conclusion

Dong-woo Kim's work in substrate etching technologies exemplifies the impact of innovative methods in semiconductor manufacturing. His patents and career achievements highlight his significant role in advancing this critical area of technology.