The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Nov. 20, 2002
Hiroshi Shiraishi, Hachioji, JP;
Sonoko Migitaka, Kodaira, JP;
Takashi Hattori, Musashimurayama, JP;
Tadashi Arai, Kumagaya, JP;
Toshio Sakamizu, Tokyo, JP;
Hiroshi Shiraishi, Hachioji, JP;
Sonoko Migitaka, Kodaira, JP;
Takashi Hattori, Musashimurayama, JP;
Tadashi Arai, Kumagaya, JP;
Toshio Sakamizu, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist patternefficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate. The resist patterncomprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.