The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Mar. 18, 2002
Applicants:

Michihiko Yanagisawa, Sagamihara, JP;

Kazuyuki Tsuruoka, Zama, JP;

Chikai Tanaka, Atsugi, JP;

Inventors:

Michihiko Yanagisawa, Sagamihara, JP;

Kazuyuki Tsuruoka, Zama, JP;

Chikai Tanaka, Atsugi, JP;

Assignee:

Speedfam Co., Ltd., Kanagawa-Pref., JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

To resolve a problem that an etching rate profile is changed by a position of a nozzle relative to a semiconductor wafer and accordingly, at a vicinity of an outer edge of the semiconductor wafer, an accurate machining result is difficult to achieve, gas including activated species produced by plasma is blown from a nozzle locally to a surface of the semiconductor wafer W supported on a wafer table concentrically therewith to thereby remove unevenness on the surface of the semiconductor wafer. In this case, the wafer table is provided with a radius larger than a radius of the semiconductor wafer supported thereby by an outstretched portion to thereby prevent an outer edge from being removed excessively by reflected gas.


Find Patent Forward Citations

Loading…