The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jul. 31, 2002
Paul R. Besser, Sunnyvale, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Pin-chin Connie Wang, Menlo Park, CA (US);
LU You, San Jose, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
Jeremias D. Romero, Hayward, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Minh Q. Tran, Milpitas, CA (US);
Pin-Chin Connie Wang, Menlo Park, CA (US);
Lu You, San Jose, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
Jeremias D. Romero, Hayward, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for manufacturing an integrated circuit having improved electromigration characteristics includes forming an aperture in an interlevel dielectric layer and providing a barrier layer in the aperture. The aperture is filled with a metal material and a barrier layer is provided above the metal material. An intermetallic region can be formed at an interface of the metal material and the barrier layer. The intermetallic material can be formed by implantation of species.