The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Oct. 21, 2002
Ping Chuang, Taichung, TW;
Huxley Lee, Hsin Chu, TW;
Henry Lo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.