The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Mar. 30, 2004
Jisoo Kim, Pleasanton, CA (US);
Sangheon Lee, San Jose, CA (US);
Sean Kang, Fremont, CA (US);
Binet Worsham, Mountain View, CA (US);
Bi-ming Yen, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Peter K. Loewenhardt, Pleasanton, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Sangheon Lee, San Jose, CA (US);
Sean Kang, Fremont, CA (US);
Binet Worsham, Mountain View, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Peter K. Loewenhardt, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.