The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Nov. 29, 2000
Akira Fukunaga, Tokyo, JP;
Kuniaki Horie, Tokyo, JP;
Naoaki Ogure, Tokyo, JP;
Takao Kato, Tokyo, JP;
Hiroshi Nagasawa, Tokyo, JP;
Shinji Kajita, Tokyo, JP;
Makoto Kubota, Tokyo, JP;
Akira Fukunaga, Tokyo, JP;
Kuniaki Horie, Tokyo, JP;
Naoaki Ogure, Tokyo, JP;
Takao Kato, Tokyo, JP;
Hiroshi Nagasawa, Tokyo, JP;
Shinji Kajita, Tokyo, JP;
Makoto Kubota, Tokyo, JP;
Ebara Corporation, Tokyo, JP;
Abstract
The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.