The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Jan. 20, 2004
Yih Song Chiu, Hsin Chu, TW;
Jao Sheng Huang, Hsin-Chu, TW;
Wen Ting Tsai, Hsin-Chu, TW;
Chen Hsiang Leu, Hsin-Chu, TW;
Yih Song Chiu, Hsin Chu, TW;
Jao Sheng Huang, Hsin-Chu, TW;
Wen Ting Tsai, Hsin-Chu, TW;
Chen Hsiang Leu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for forming shallow trench isolation (STI) structure including providing a substrate comprising an overlying hardmask layer; patterning the hardmask layer to form a hardmask layer opening for etching a trench through a substrate thickness portion; etching a trench according to the patterned overlying hardmask layer; carrying out a wet chemical oxidizing process to form an oxidized surface portion on the hardmask layer; carrying out a wet chemical etching process to remove at least a portion of the oxidized surface portion to form the hardmask opening having an enlarged width and the trench opening comprising rounded upper corners; and, forming a completed planarized STI structure filled with oxide.