The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Oct. 08, 2002
Baw-ching Perng, Hsin-Chu, TW;
Fang-cheng Chen, Hsin-Chu, TW;
Hun-jan Tao, Hsinchu, TW;
Peng-fu Hsu, Hsin-Chu, TW;
Yue-ho Hsieh, Hsinchu, TW;
Chih-cheng Wang, Hsinchu, TW;
Shih-yi Hsiao, Chiai, TW;
Baw-Ching Perng, Hsin-Chu, TW;
Fang-Cheng Chen, Hsin-Chu, TW;
Hun-Jan Tao, Hsinchu, TW;
Peng-Fu Hsu, Hsin-Chu, TW;
Yue-Ho Hsieh, Hsinchu, TW;
Chih-Cheng Wang, Hsinchu, TW;
Shih-Yi Hsiao, Chiai, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.