The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6968288 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 22, 2005

Filed:

Aug. 04, 2003
Applicants:

Dennis L. Macaluso, South Burlington, VT (US);

Richard A. Phelps, Colchester, VT (US);

Charles A. Whiting, Milton, VT (US);

Inventors:

Dennis L. Macaluso, South Burlington, VT (US);

Richard A. Phelps, Colchester, VT (US);

Charles A. Whiting, Milton, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N021/00 ; G06F015/00 ; G06F019/00 ; G03B027/42 ;
U.S. Cl.
CPC ...
Abstract

The present invention relates to determining the location of a defect source which results in a localized elevation on the surface topography of a substrate such as, for example, a silicon wafer. The wafer is placed on a chuck of a semiconductor process tool such as, for example, a photolithographic tool. The upper surface of the wafer is processed by the photolithographic tool to obtain topography measurements. The topography measurements are analyzed to detect the presence of the localized elevation on the upper surface of the wafer. Once the presence of the localized elevation is detected, calculations are performed using the topography measurements to determine whether the source of the localized elevation results from the chuck.


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