The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Aug. 29, 2002
Chentsau Ying, Cupertino, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Chentsau Ying, Cupertino, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Other;
Abstract
A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.