The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Sep. 13, 2004
Yongsik Moon, San Mateo, CA (US);
David Mai, San Jose, CA (US);
Kapila Wijekoon, Palo Alto, CA (US);
Rajeev Bajaj, Fremont, CA (US);
Rahul Surana, Fremont, CA (US);
Yongqi HU, Santa Clara, CA (US);
Tony S. Kaushal, Cupertino, CA (US);
Shijian LI, San Jose, CA (US);
Jui-lung LI, San Jose, CA (US);
Shi-ping Wang, Fremont, CA (US);
Gary Lam, Santa Clara, CA (US);
Fred C. Redeker, Fremont, CA (US);
Yongsik Moon, San Mateo, CA (US);
David Mai, San Jose, CA (US);
Kapila Wijekoon, Palo Alto, CA (US);
Rajeev Bajaj, Fremont, CA (US);
Rahul Surana, Fremont, CA (US);
Yongqi Hu, Santa Clara, CA (US);
Tony S. Kaushal, Cupertino, CA (US);
Shijian Li, San Jose, CA (US);
Jui-Lung Li, San Jose, CA (US);
Shi-Ping Wang, Fremont, CA (US);
Gary Lam, Santa Clara, CA (US);
Fred C. Redeker, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.