The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Mar. 18, 2004
Jochen Beintner, Wappingers Falls, NY (US);
Rama Divakaruni, Ossining, NY (US);
Johnathan Faltermeier, Lagrange, NY (US);
Philip L. Flaitz, Newburgh, NY (US);
Oleg Gluschenkov, Wappingers Falls, NY (US);
Carol J. Heenan, Lagrangeville, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Byeong Kim, Lagrangeville, NY (US);
Mihel Seitz, Wappingers Falls, NY (US);
Akira Sudo, Yokohama, JP;
Yoichi Takegawa, Yokohama, JP;
Jochen Beintner, Wappingers Falls, NY (US);
Rama Divakaruni, Ossining, NY (US);
Johnathan Faltermeier, Lagrange, NY (US);
Philip L. Flaitz, Newburgh, NY (US);
Oleg Gluschenkov, Wappingers Falls, NY (US);
Carol J. Heenan, Lagrangeville, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Byeong Kim, Lagrangeville, NY (US);
Mihel Seitz, Wappingers Falls, NY (US);
Akira Sudo, Yokohama, JP;
Yoichi Takegawa, Yokohama, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An improved pitcher-shaped active area for a field effect transistor that, for a given gate length, achieves an increase in transistor on-current, a decrease in transistor serial resistance, and a decrease in contact resistance. The pitcher-shaped active area structure includes at least two shallow trench insulator (STI) structures formed into a substrate that defines an active area structure, which includes a widened top portion with a larger width than a bottom portion. An improved fabrication method for forming the improved pitcher-shaped active area is also described that implements a step to form STI structure divots followed by a step to migrate substrate material into at least portions of the divots, thereby forming a widened top portion of the active area structure. The fabrication method of present invention forms the pitcher-shaped active area without the use of lithography, and therefore, is not limited by the smallest ground rules of lithography tooling.