The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Sep. 03, 2003
Ihsan J. Djomehri, Mountain View, CA (US);
Jung-suk Goo, Stanford, CA (US);
Srinath Krishnan, Campbell, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
James N. Pan, Fishkill, NY (US);
Qi Xiang, San Jose, CA (US);
Ihsan J. Djomehri, Mountain View, CA (US);
Jung-Suk Goo, Stanford, CA (US);
Srinath Krishnan, Campbell, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
James N. Pan, Fishkill, NY (US);
Qi Xiang, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a channel region for a transistor includes forming a layer of silicon germanium (SiGe) above a substrate, forming an oxide layer above the SiGe layer wherein the oxide layer includes an aperture in a channel area and the aperture is filled with a SiGe feature, depositing a layer having a first thickness above the oxide layer and the SiGe feature, and forming source and drain regions in the layer.