The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Oct. 09, 2003
Christopher Bencher, Sunnyvale, CA (US);
Joe Feng, Santa Clara, CA (US);
Mei-yee Shek, Burlingame, CA (US);
Chris Ngai, Burlingame, CA (US);
Judy Huang, Los Gatos, CA (US);
Christopher Bencher, Sunnyvale, CA (US);
Joe Feng, Santa Clara, CA (US);
Mei-Yee Shek, Burlingame, CA (US);
Chris Ngai, Burlingame, CA (US);
Judy Huang, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.