The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Dec. 12, 2001
Sanjay Gopinath, Fremont, CA (US);
Patrick A. Van Cleemput, Sunnyvale, CA (US);
Michelle Schulberg, Palo Alto, CA (US);
Sasangan Ramanathan, San Ramon, CA (US);
Francisco Juarez, Fremont, CA (US);
Patrick Joyce, San Jose, CA (US);
Sanjay Gopinath, Fremont, CA (US);
Patrick A. Van Cleemput, Sunnyvale, CA (US);
Michelle Schulberg, Palo Alto, CA (US);
Sasangan Ramanathan, San Ramon, CA (US);
Francisco Juarez, Fremont, CA (US);
Patrick Joyce, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention pertains to apparatus and methods for introduction of solid precursors and reactants into a supercritical fluid reactor. Solids are dissolved in supercritical fluid solvents in generator apparatus separate from the supercritical fluid reactor. Such apparatus preferably generate saturated solutions of solid precursors via recirculation of supercritical fluids through a vessel containing the solid precursors. Supercritical solutions of the solids are introduced into the reactor, which itself is charged with a supercritical fluid. Supercritical conditions are maintained during the delivery of the dissolved precursor to the reactor. Recirculation of supercritical precursor solutions through the reactor may or may not be implemented in methods of the invention. Methods of the invention are particularly well suited for integrated circuit fabrication, where films are deposited on wafers under supercritical conditions.