The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Aug. 19, 2002
Michael Hsu, Taipei, TW;
Stephen Hsu, Fremont, CA (US);
Thomas Laidig, Point Richmond, CA (US);
Douglas Van Den Broeke, Sunnyvale, CA (US);
Jang Fung Chen, Cupertino, CA (US);
Michael Hsu, Taipei, TW;
Stephen Hsu, Fremont, CA (US);
Thomas Laidig, Point Richmond, CA (US);
Douglas Van Den Broeke, Sunnyvale, CA (US);
Jang Fung Chen, Cupertino, CA (US);
ASML Masktools B.V., Veldhoven, NL;
Abstract
A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.