The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Dec. 16, 2003
Yu Cheng, Fremont, CA (US);
Helen Zhu, Fremont, CA (US);
Vinay V. Phoray, Fremont, CA (US);
Hanzhong Xiao, Pleasanton, CA (US);
Peter K. Loewenhardt, Pleasanton, CA (US);
Yu Cheng, Fremont, CA (US);
Helen Zhu, Fremont, CA (US);
Vinay V. Phoray, Fremont, CA (US);
Hanzhong Xiao, Pleasanton, CA (US);
Peter K. Loewenhardt, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.