The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Nov. 17, 2003
William Hong, Taipei, TW;
Chia-che Chung, Tainan, TW;
Chi-wei Chung, Yunlin, TW;
Wen-chih Chiou, Miaoli, TW;
Ying-ho Chen, Taipei, TW;
Syun-ming Jang, Hsin-Chu, TW;
William Hong, Taipei, TW;
Chia-Che Chung, Tainan, TW;
Chi-Wei Chung, Yunlin, TW;
Wen-Chih Chiou, Miaoli, TW;
Ying-Ho Chen, Taipei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An oxide polishing process that is part of a CMP process flow is disclosed. After a copper layer is polished at a first polishing station and a diffusion barrier layer is polished at a second polishing station, a key sequence at a third polish station is the application of a first oxide slurry and a first DI water rinse followed by a second oxide slurry and then a second DI water rinse. As a result, defect counts are reduced from several thousand to less than 100. Another important factor is a low down force that enables more efficient particle removal. The improved oxide polishing process has the same throughput as a single oxide polish and a DI water rinse method and may be implemented in any three slurry copper CMP process flow.