The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jun. 19, 2003
Jun-ho Jeong, Daejeon, KR;
Hyonkee Sohn, Daejeon, KR;
Young-suk Sim, Seoul, KR;
Young-jae Shin, Daejeon, KR;
Eung-sug Lee, Daejeon, KR;
Kyung-hyun Whang, Daejeon, KR;
Jun-Ho Jeong, Daejeon, KR;
HyonKee Sohn, Daejeon, KR;
Young-Suk Sim, Seoul, KR;
Young-Jae Shin, Daejeon, KR;
Eung-Sug Lee, Daejeon, KR;
Kyung-Hyun Whang, Daejeon, KR;
Korea Institute of Machinery & Materials, Daejeon, KR;
Abstract
A UV nanoimprint lithography process for forming nanostructures on a substrate. The process includes depositing a resist on a substrate; contacting a stamp having formed thereon nanostructures at areas corresponding to where nanostructures on the substrate are to be formed to an upper surface of the resist, and applying a predetermined pressure to the stamp in a direction toward the substrate, the contacting and applying being performed at room temperature and at low pressure; irradiating ultraviolet rays onto the resist; separating the stamp from the resist; and etching an upper surface of the substrate on which the resist is deposited. The stamp is an elementwise embossed stamp that comprises at least two element stamps, and grooves formed between adjacent element stamps and having a depth that is greater than a depth of the nanostructures formed on the element stamps.