The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Feb. 10, 2003
Applicants:
Jing-cheng Lin, Hsin Chu, TW;
Cheng-lin Huang, Taipei, TW;
Winston Shue, Hsinchu, TW;
Mong-song Liang, Hsin-Chu, TW;
Inventors:
Jing-Cheng Lin, Hsin Chu, TW;
Cheng-Lin Huang, Taipei, TW;
Winston Shue, Hsinchu, TW;
Mong-Song Liang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ; H01L021/44 ; H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.