The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Mar. 05, 2003
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.