The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Jun. 18, 2003
Anthony I. Chou, Fishkill, NY (US);
Michael P. Chudzik, Beacon, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Paul D. Kirsch, Fishkill, NY (US);
Kristen C. Scheer, Milton, NY (US);
Joseph Shepard, Jr., Fishkill, NY (US);
Anthony I. Chou, Fishkill, NY (US);
Michael P. Chudzik, Beacon, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Paul D. Kirsch, Fishkill, NY (US);
Kristen C. Scheer, Milton, NY (US);
Joseph Shepard, Jr., Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.