The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Dec. 16, 2002
John M. Cotte, New Fairfield, CT (US);
Kenneth J. Mccullough, Fishkill, NY (US);
Wayne M. Moreau, Wappingers Falls, NY (US);
Keith R. Pope, Danbury, CT (US);
Robert J. Purtell, Mohegan Lake, NY (US);
John P. Simons, Wappingers Falls, NY (US);
Charles J. Taft, Wappingers Falls, NY (US);
John M. Cotte, New Fairfield, CT (US);
Kenneth J. McCullough, Fishkill, NY (US);
Wayne M. Moreau, Wappingers Falls, NY (US);
Keith R. Pope, Danbury, CT (US);
Robert J. Purtell, Mohegan Lake, NY (US);
John P. Simons, Wappingers Falls, NY (US);
Charles J. Taft, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.