The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Dec. 09, 1999
Applicants:
Hayashi Otsuki, Kousai-machi, JP;
Kunihiro Tada, Nirasaki, JP;
Kimihiro Matsuse, Inagi, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo-To, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/44 ; H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiClgas, a silicon hydride gas and NHgas are used as source gases for forming the TiSiN film by the thermal CVD process. TiClgas, a silicon hydride gas, Hgas and Ngas are used as source gases for forming a TiSiN film by the plasma CVD process.
Otsuki, Hayashi. (2005). Method for forming tisin film, diffusion preventive film comprising tisin film, semiconductor device and its production method, and apparatus for forming tisin film (U.S. Patent No. 6919273). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6919273
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile