The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Jul. 03, 2003
Andrej S. Mitrovic, Phoenix, AZ (US);
Jovan Jevtic, Milwaukee, WI (US);
Richard Parsons, Phoenix, AZ (US);
Murray D. Sirkis, Tempe, AZ (US);
Andrej S. Mitrovic, Phoenix, AZ (US);
Jovan Jevtic, Milwaukee, WI (US);
Richard Parsons, Phoenix, AZ (US);
Murray D. Sirkis, Tempe, AZ (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.