The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Mar. 11, 2003
Kouichirou Tsujita, Tokyo, JP;
Akihiro Nakae, Tokyo, JP;
Kouichirou Tsujita, Tokyo, JP;
Akihiro Nakae, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A multilayer structure which provides for optimization of a configuration of a patterned photoresist is designed. A multilayer structure () includes polysilicon (), a silicon oxide film () and an anti-reflective film () which are deposited sequentially in the order noted, and a photoresist () is provided on the anti-reflective film (), so that light for exposure is incident on the multilayer structure () through the photoresist (). First, as a step (i), a range of thickness of the silicon oxide film () is determined so as to allow an absolute value of a reflection coefficient of the light for exposure at an interface between the anti-reflective film () and the photoresist () to be equal to or smaller than a first value. Subsequently, as a step (ii), the range of thickness of the silicon oxide film () determined in the step (i) is delimited so as to allow an absolute value of a phase of the reflection coefficient to be equal to or larger than a second value.