The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Nov. 06, 2002
Rocco A. Orsini, Long Beach, CA (US);
Michael B. Petach, Redondo Beach, CA (US);
Mark E. Michaelian, Torrance, CA (US);
Henry Shields, San Pedro, CA (US);
Roy D. Mcgregor, El Camino Village, CA (US);
Steven W. Fornaca, Torrance, CA (US);
Rocco A. Orsini, Long Beach, CA (US);
Michael B. Petach, Redondo Beach, CA (US);
Mark E. Michaelian, Torrance, CA (US);
Henry Shields, San Pedro, CA (US);
Roy D. McGregor, El Camino Village, CA (US);
Steven W. Fornaca, Torrance, CA (US);
University of Central Florida Research Foundation, Orlando, FL (US);
Abstract
A laser-plasma EUV radiation source () that employs one or more approaches for preventing vaporization of material from a nozzle assembly () of the source () by electrical discharge from the plasma (). The first approach includes employing an electrically isolating nozzle end, such as a glass capillary tube (). The tube () extends beyond all of the conductive surfaces of the nozzle assembly () by a suitable distance so that the pressure around the closest conducting portion of the nozzle assembly () is low enough not to support arcing. A second approach includes providing electrical isolation of the conductive portions of the source () from the vacuum chamber wall. A third approach includes applying a bias potential () to the nozzle assembly () to raise the potential of the nozzle assembly () to the potential of the arc.