The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Sep. 09, 2003
Applicants:
Wei Zheng, Santa Clara, CA (US);
Yun Wu, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Inventors:
Wei Zheng, Santa Clara, CA (US);
Yun Wu, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Assignee:
FASL, LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C016/04 ;
U.S. Cl.
CPC ...
Abstract
A charge trapping dielectric memory device. The memory device includes a gate electrode disposed over a dielectric stack that includes a dielectric charge trapping layer. The gate electrode has a work function of about 4.6 eV to about 5.2 eV.