The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Jul. 22, 2002
Applicants:
Peter G. Tolchinsky, Beaverton, OR (US);
Irwin Yablok, Portland, OR (US);
Mohamad A. Shaheen, Portland, OR (US);
Inventors:
Peter G. Tolchinsky, Beaverton, OR (US);
Irwin Yablok, Portland, OR (US);
Mohamad A. Shaheen, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
A method is provided for fabricating an SOI water. This may involve forming a silicon substrate and implanting oxygen into the substrate. Damaged portions of the implanted silicon may be healed/cured by CMP or anneal, for example. An epi layer may then be deposited over the healed/cured regions of the substrate. The substrate may then be annealed to form an insulative layer. The wafer may be thinned to provide the proper thickness of the epi layer.