The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Jan. 31, 2003
Haining Yang, Wappingers Falls, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Hongwen Yan, Somers, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Haining Yang, Wappingers Falls, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Hongwen Yan, Somers, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a semiconductor device having a gate stack structure that includes gate stack sidewall, the gate stack structure having one or more metal layers comprising a gate metalis provided. The gate metal is recessed away from the gate stack sidewall using a chemical etch. The gate metal of the gate stack structure is selectively oxidized to form a metal oxide that at least partly fills the recess.