The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Jul. 29, 2003
Gert Burbach, Dresden, DE;
Manfred Horstmann, Dürrersdorf-Diltersbach, DE;
Thomas Feudel, Radebeul, DE;
Gert Burbach, Dresden, DE;
Manfred Horstmann, Dürrersdorf-Diltersbach, DE;
Thomas Feudel, Radebeul, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
In an SOI diode structure, the conventional transistor-like MOS configuration is eliminated by replacing the polysilicon line by a completely dielectric region. This region may be used as an implantation mask to control a dopant gradient of a PN-junction that forms below the dielectric region. Moreover, during the salicide process, the dielectric region prevents the PN-junction from being shorted. Thus, a depletion of the active region caused by the MOS structure may be avoided. Therefore, the functioning of the PN-junction is maintained even for extremely thin semiconductor layers.