The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Sep. 06, 2001
Tatehito Usui, Chiyoda, JP;
Takashi Fujii, Kudamatsu, JP;
Motohiko Yoshigai, Hikari, JP;
Tetsunori Kaji, Tokuyama, JP;
Hideyuki Yamamoto, Kudamatsu, JP;
Tatehito Usui, Chiyoda, JP;
Takashi Fujii, Kudamatsu, JP;
Motohiko Yoshigai, Hikari, JP;
Tetsunori Kaji, Tokuyama, JP;
Hideyuki Yamamoto, Kudamatsu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.