The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Jan. 25, 2002
Takuya Sugawara, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Seiji Matsuyama, Nirasaki, JP;
Shigemi Murakawa, Tokyo, JP;
Yoshihide Tada, Nirasaki, JP;
Takuya Sugawara, Nirasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Shigenori Ozaki, Amagasaki, JP;
Seiji Matsuyama, Nirasaki, JP;
Shigemi Murakawa, Tokyo, JP;
Yoshihide Tada, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.