The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

Dec. 12, 2001
Applicants:

Norio Kanetsuki, Tenri, JP;

Tatsushi Yamamoto, Ikoma-gun, JP;

Masaki Hirayama, Sendai, JP;

Tadahiro Ohmi, Sendai, JP;

Inventors:

Norio Kanetsuki, Tenri, JP;

Tatsushi Yamamoto, Ikoma-gun, JP;

Masaki Hirayama, Sendai, JP;

Tadahiro Ohmi, Sendai, JP;

Assignees:

Sharp Kabushiki Kaisha, Osaka, JP;

Tadahiro Ohmi, Miyagi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract

According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.


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