The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2005

Filed:

Mar. 31, 2003
Applicants:

Hartmut Ruelke, Dresden, DE;

Joerg Hohage, Dresden, DE;

Thomas Werner, Dresden, DE;

Massud Aminpur, Dresden, DE;

Inventors:

Hartmut Ruelke, Dresden, DE;

Joerg Hohage, Dresden, DE;

Thomas Werner, Dresden, DE;

Massud Aminpur, Dresden, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract

The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier/etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.


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