The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
May. 29, 2003
Chiung-sheng Hsiung, Hsinchu, TW;
Chih-chao Yang, Hsinchu, TW;
Gwo-shil Yang, Hsinchu, TW;
Ming-shih Yeh, Changhua Hsien, TW;
Jen-kon Chen, Hsinchu, TW;
Chiung-Sheng Hsiung, Hsinchu, TW;
Chih-Chao Yang, Hsinchu, TW;
Gwo-Shil Yang, Hsinchu, TW;
Ming-Shih Yeh, Changhua Hsien, TW;
Jen-Kon Chen, Hsinchu, TW;
United Microelectronics Corp., Hisnchu, TW;
Abstract
An interconnection structure and a fabrication method thereof. A first organic low-k material layer, a stress redistribution layer, a second organic low-k dielectric layer are formed in sequence over a substrate, followed by forming an opening in the first organic low-k material layer, the stress redistribution layer, and the second organic low-k dielectric layer. The opening is then filled with a conductive material to form an interconnection structure. The stress redistribution layer has a heat expansion coefficient closer to that of the substrate, while such heat expansion coefficient differs more significantly from those of the first and second organic low-k material layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile