The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2005

Filed:

Apr. 26, 2002
Applicants:

Atsushi Sekiguchi, Tokyo, JP;

Masami Shibagaki, Tokyo, JP;

Tomoaki Koide, Tokyo, JP;

Takafumi Kuninobu, Tokyo, JP;

Kaoru Suzuki, Tokyo, JP;

Inventors:

Atsushi Sekiguchi, Tokyo, JP;

Masami Shibagaki, Tokyo, JP;

Tomoaki Koide, Tokyo, JP;

Takafumi Kuninobu, Tokyo, JP;

Kaoru Suzuki, Tokyo, JP;

Assignee:

Anelva Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C016/06 ;
U.S. Cl.
CPC ...
Abstract

A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.


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