The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
May. 22, 2000
Torbjorn Sandstrom, Pixbo, SE;
Peter Ekberg, Lidingo, SE;
Per Askebjer, Akersberga, SE;
Mats Ekberg, Vasteras, SE;
Anders Thuren, Taby, SE;
Torbjorn Sandstrom, Pixbo, SE;
Peter Ekberg, Lidingo, SE;
Per Askebjer, Akersberga, SE;
Mats Ekberg, Vasteras, SE;
Anders Thuren, Taby, SE;
Micronic Laser Systems AB, Taby, SE;
Abstract
The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure stati n, and/or about behavior of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.