The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2005

Filed:

Oct. 09, 2001
Applicants:

Auguste J. L. Sophie, Heverlee, BE;

Hessel Sprey, Kessel-Lo, BE;

Pekka J. Soininen, Espoo, FI;

Kai-erik Elers, Portland, OR (US);

Inventors:

Auguste J. L. Sophie, Heverlee, BE;

Hessel Sprey, Kessel-Lo, BE;

Pekka J. Soininen, Espoo, FI;

Kai-Erik Elers, Portland, OR (US);

Assignee:

ASM International NV, Bilthoren, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ; B05D005/12 ;
U.S. Cl.
CPC ...
Abstract

The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.


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