The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Feb. 28, 2002
Geun-young Yeom, Seoul, KR;
Min-jae Chung, Bucheon, KR;
Do-haing Lee, Suwon, KR;
Sung-min Cho, Gunpo, KR;
Sae-hoon Chung, Seoul, KR;
Geun-young Yeom, Seoul, KR;
Min-jae Chung, Bucheon, KR;
Do-haing Lee, Suwon, KR;
Sung-min Cho, Gunpo, KR;
Sae-hoon Chung, Seoul, KR;
Sungkyunkwan University, Seoul, KR;
Abstract
A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.