The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Feb. 04, 2003
Yoshiko Yoshida, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Yasuhiro Kimura, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Yoshiko Yoshida, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Yasuhiro Kimura, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.